Raytheon provides information about GaN-powered AESA radar to US Army

15 August 2016 (Last Updated August 15th, 2016 18:30)

Raytheon has provided the US Army with information about its next-generation air and missile defence radar.

Raytheon has provided the US Army with information about its next-generation air and missile defence radar.

The details were supplied for the army's lower tier air and missile defense sensor (LTAMDS) acquisition programme, which aims to upgrade or replace the current Patriot radar in order to improve its operational effectiveness against emerging threats.

Raytheon's gallium nitride (GaN) powered active electronically scanned array (AESA) radar has been designed to serve as a sensor on the integrated air and missile defence battle command system network.

"The GaN-based AESA radar technology is expected to increase detection range and power, as well as enable 360° coverage."

The radar will be compatible with the current Patriot system and any future upgrades fielded by the 13 nations using it, Raytheon said in a statement.

The GaN-based AESA radar technology is expected to increase detection range and power, as well as enable 360° coverage.

Raytheon Integrated Defense Systems business Integrated Air and Missile Defense vice-president Ralph Acaba said: "Raytheon showed it can quickly and affordably design, build, test and field a GaN-based AESA radar capable of defeating all threats when we exhibited a potential LTAMDS solution at the winter AUSA tradeshow this past March."

The company has built GaN circuits for radars and jammers following a $200m investment over a period of 15 years.

GaN is a powerful semiconductor that uses energy efficiently to amplify the radar's high-power radio frequencies.