BAE Systems has begun production of a new family of radiation-hardened Static Random-Access Memory (SRAM) products used on satellites, which provide four times the power-enabled, volatile memory of similar-sized SRAM products.
BAE Systems’ new SRAM products include a 16MB monolithic, and 32, 64 and 80MB multi-chip modules.
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The 16MB SRAM development is part of a multi-phase research and development contract, BAE said. The latest 16MB SRAM has 256 times more memory than the first, which was produced in 1986.
The devices withstand total ionizing doses of 1Mrad (Si), are immune to single-event-induced latch-up, and are characterised over a temperature range of -55°C to +125°C.
Development of the devices was funded by the Defense Threat Reduction Agency.
The Defense Threat Reduction Agency safeguards the United States and its allies from chemical, biological, radiological and nuclear weapons, and high explosives, through efforts to reduce, eliminate, and counter these threats and mitigate their effects.
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