The Defense Advanced Research Projects Agency (DARPA) has awarded a contract to Grandis for the second phase of research to develop spin-transfer torque random access memory (STT-RAM) chips.

Under the $8.6m contract, the company will carry out the phase-II research work which includes test and verification of STT-RAM integrated memory arrays.

The future-generation STT-RAM is a solid-state memory technology, which is dense, non-volatile and radiation-hard, making it ideally suited for defence applications.

Grandis president Farhad Tabrizi said STT-RAM has huge potential as the only non-volatile random access memory which scales beyond 10nm.

“It is also the only technology fast enough to replace the existing DRAM at 32nm, embedded SRAM and flash at 45nm, and ultimately replace NAND,” he said.

Work under the first phase began in October 2008 and was completed in March of this year, six months ahead of schedule.